Cambridge GaN switches CEO to boost strategic expansion
Fabio Necco replaces CEO and co-founder Giorgia Longobardi who remains company CMO, continues to act as a director and sits on the Advisory Board of the International Semiconductor Industry Group (I.S.I.G.). CGD is developing a range of energy-efficient GaN-based power devices to make sustainable electronics possible.
Longobardi said: “I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market.
“Fabio, is the right person with the right skill set to take CGD into its next growth phase and I shall do all I can to support his initiatives as I transition into my new role as CMO at CGD.”
Necco comes to CGD from onsemi, the US-based semiconductor company specialised in delivering industry-leading intelligent power and intelligent sensing solutions where he was vice president and division general manager with more than 25 years’ experience in power electronics, application engineering, vehicle electrification, and data centres, all primary market focus points of CGD.
Necco said: “CGD is at an exciting juncture in its history. I have known CGD and Giorgia for years and have long been impressed with its success under her leadership. I am very excited about CGD’s unique technology and to have been chosen to lead our entire team to the next stages of product development as well as substantially increasing our presence in key markets.”
CGD's energy-efficient GaN devices enable power electronic designers to develop sustainable, energy-efficient systems. These inherent benefits, coupled with the flexibility of the proven fabless model, make CGD uniquely positioned to exploit rapidly growing markets, which can already be seen in the exponential demand for GaN technology.
Unlike many other GaN solutions, CGD's ICeGaN® technology uses a monolithic, single-chip approach that integrates all necessary components onto a single die, which substantially improves efficiency and performance.
That monolithic design means that CGD delivers compact, engineer-led GaN power devices that combine next-generation design and innovation, making it ideal for the market specific requirements of Traction/Aux inverters for electric vehicle (EV) and industrial power conversion solutions. The company’s focus on bare die, ease of use, robust gate, and parallel operation make it suitable for a wide range of power applications.
CGD was spun out from Cambridge University, and its founders, Dr. Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University.
CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, resulting from the company's commitment to innovation.
